NXP Semiconductors


Select site:

English

BLF6G20-180RN; BLF6G20LS-180RN

Selection guide

Datasheet

BLF6G20-180RN; BLF6G20LS-180RN
(Product Specification)
17-Nov-08, 12 pages, 103 kB

Download all documentation

BLF6G20-180RN; BLF6G20LS-180RN - Power LDMOS transistor

General description
Features
Products/packages
Quality/reliability/chemical content
Pricing/ordering/availability
Samples
Discontinued information
Applications
Block diagrams/pinning
Design support
Parametrics/similar products
Print/email
Disclaimers
All information hereunder is subject to the subsequent disclaimers

General description

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.

Features

  • Typical 2-carrier WCDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 30 V and an IDq of 1400 mA:
    • Average output power = 40 W
    • Power gain = 17.2 dB
    • Efficiency = 27 pct
    • IMD3 = -41 dBc
    • ACPR = -38 dBc
  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1800 MHz to 2000 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
BLF6G20-180RNBLF6G20-180RN,1129340 627 31112Volume productionSOT502A
(LDMOST)
Blister packStandard Marking
BLF6G20LS-180RNBLF6G20LS-180RN,119340 627 32112Volume productionSOT502B
(LDMOST)
Blister packStandard Marking
BLF6G20LS-180RNBLF6G20LS-180RN:119340 627 32118Volume productionSOT502B
(LDMOST)
Reel Pack, SMD, 13"Standard Marking

Quality/reliability/chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
BLF6G20-180RNBLF6G20-180RN,112BLF6G20-180RN
Always Pb-free
BLF6G20LS-180RNBLF6G20LS-180RN,11BLF6G20LS-180RN
Always Pb-free
BLF6G20LS-180RNBLF6G20LS-180RN:11BLF6G20LS-180RN
Always Pb-free

Quality and reliability disclaimer

Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF6G20-180RN9340 627 31112  BLF6G20-180RN,112        Order samples
BLF6G20LS-180RN9340 627 32112  BLF6G20LS-180RN,11        Order samples
BLF6G20LS-180RN9340 627 32118  BLF6G20LS-180RN:11        Order samples

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range


Related applications
Power amplifier board

Design support

Support Documents

Parametrics/similar products

Type numberPackageDescriptionproduct application descriptionfrange(MHz)PL(W)?D(%)Gp(dB)VDS(V)
BLF6G20-180RNSOT502A
(LDMOST)
Power LDMOS transistorGSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range1800 - 2000402717.230
BLF6G20LS-180RNSOT502B
(LDMOST)
Power LDMOS transistorGSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range1800 - 2000402717.230


Similar products
BLF6G20-180RN; BLF6G20LS-180RN links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.