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BLF6G20-75_BLF6G20LS-75
Datasheet
General description
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
CAUTIONThis device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
Features
- Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply
voltage of 28 V and an IDq of 550 mA:
- Average output power = 29.5 W
- Gain = 19 dB
- Efficiency = 37.5 pct
- ACPR400k = -61.5 dBc
- ACPR600k = -73 dBc
- EVMrms = 1.7 pct
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1800 MHz to 2000 MHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Products/packages
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking | ECCN |
|---|---|---|---|---|---|---|---|
| BLF6G20-75 | BLF6G20-75,112 | 9340 612 49112 | Volume production | SOT502A
(LDMOST) | Blister pack | Standard Marking | |
| BLF6G20LS-75 | BLF6G20LS-75,112 | 9340 609 22112 | Volume production | SOT502B
(LDMOST) | Blister pack | Standard Marking | |
| BLF6G20LS-75 | BLF6G20LS-75,118 | 9340 609 22118 | Volume production | SOT502B
(LDMOST) | Reel Pack, SMD, 13" | Standard Marking |
Quality/reliability/chemical content
| Type number | Orderable part number | Chemical content | RoHS | Leadfree Conversion date | RHF | IRF (FIT) | MTBF (hours) | MSL Lead-free |
|---|---|---|---|---|---|---|---|---|
| BLF6G20-75 | BLF6G20-75,112 | BLF6G20-75 |
| Always Pb-free | ||||
| BLF6G20LS-75 | BLF6G20LS-75,112 | BLF6G20LS-75 |
| Always Pb-free | ||||
| BLF6G20LS-75 | BLF6G20LS-75,118 | BLF6G20LS-75 |
| Always Pb-free |
Pricing/ordering/availability
| Type number | Ordering code(12NC) | Orderable part number | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|---|
| BLF6G20-75 | 9340 612 49112 | BLF6G20-75,112 | NA | ARROW ELECTRONICS | 112 | 3/18/2010 | Buy online | Order samples | ||
| JAPAN | CHIP ONE STOP | no | 03/19/2010 | Buy online | ||||||
| BLF6G20LS-75 | 9340 609 22112 | BLF6G20LS-75,112 | NA | ARROW ELECTRONICS | 118 | 3/18/2010 | Buy online | Order samples | ||
| JAPAN | CHIP ONE STOP | no | 03/19/2010 | Buy online | ||||||
| BLF6G20LS-75 | 9340 609 22118 | BLF6G20LS-75,118 | NA | ARROW ELECTRONICS | 118 | 3/18/2010 | Buy online | Order samples | ||
| JAPAN | CHIP ONE STOP | no | 03/19/2010 | Buy online |
Applications
- RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 1800 MHz to 2000 MHz frequency range
Related applications
Power amplifier board
Design support
Support Documents
RF_Fundamentals;
RF Fundamentals (2009-02-24)nxp_rf_manual_12th_edition;
RF Manual 12th Edition (2009-06-01)Parametrics/similar products
| Type number | Package | Description | product application description | frange(MHz) | PL(W) | ?D(%) | Gp(dB) | VDS(V) | mode of operation |
|---|---|---|---|---|---|---|---|---|---|
| BLF6G20-75 | SOT502A
(LDMOST) | Power LDMOS transistor | RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations | 1,800 - 2,000 | 29.5 | 37.5 | 19 | 28 | EDGE |
| BLF6G20LS-75 | SOT502B
(LDMOST) | Power LDMOS transistor | RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations | 1,800 - 2,000 | 29.5 | 37.5 | 19 | 28 | EDGE |
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