This device has been transferred from Ampleon to Flip Electronics.

UHF power LDMOS transistor

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

Features and benefits

  • Easy power control
  • Excellent reliability
  • Integrated ESD protection
  • High power gain
  • High efficiency
  • Excellent ruggedness
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Communication transmitter applications in the UHF frequency range
  • Industrial applications in the UHF band

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF871S

UHF power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 100 W
Test signal: CW
Gp power gain PL = 100 W; VDS = 40 V; f = 860 MHz 21 dB
ηD drain efficiency PL = 100 W; VDS = 40 V; f = 860 MHz; IDq = 500 mA 60 %
PL output power 100 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF871S SOT467B
(SOT467B)
sot467b_po Bulk Pack Transferred Standard Marking BLF871S,112
(9340 635 02112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF871S 9340 635 02112 BLF871S,112 Flip Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF871S 9340 635 02112 BLF871S,112 Flip Electronics Buy Not available

Design support