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BLS6G3135-120_6G3135S-120
Datasheet
General description
120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Features
- Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage
of 32 V, an IDq of 100 mA, a tp of up to 300 us with δ of 10 pct:
- Output power = 120 W
- Gain = 11 dB
- Efficiency = 43 pct
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (3.1 GHz to 3.5 GHz)
- Internally matched for ease of use
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Products/packages
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking | ECCN |
|---|---|---|---|---|---|---|---|
| BLS6G3135-120 | BLS6G3135-120,112 | 9340 600 63112 | Volume production | SOT502A
(LDMOST) | Blister pack | Standard Marking | |
| BLS6G3135S-120 | BLS6G3135S-120,112 | 9340 600 64112 | Volume production | SOT502B
(LDMOST) | Blister pack | Standard Marking |
Quality/reliability/chemical content
| Type number | Orderable part number | Chemical content | RoHS | Leadfree Conversion date | RHF | IRF (FIT) | MTBF (hours) | MSL Lead-free |
|---|---|---|---|---|---|---|---|---|
| BLS6G3135-120 | BLS6G3135-120,112 | BLS6G3135-120 |
| Always Pb-free | ||||
| BLS6G3135S-120 | BLS6G3135S-120,112 | Not available |
| Always Pb-free |
Pricing/ordering/availability
| Type number | Ordering code(12NC) | Orderable part number | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|---|
| BLS6G3135-120 | 9340 600 63112 | BLS6G3135-120,112 | NA | AVNET ELECTRONICS MARKETING | 10 | 3/18/2010 | Buy online | Order samples | ||
| JAPAN | CHIP ONE STOP | no | 03/19/2010 | Buy online | ||||||
| BLS6G3135S-120 | 9340 600 64112 | BLS6G3135S-120,112 | JAPAN | CHIP ONE STOP | no | 03/19/2010 | Buy online | Order samples |
Applications
- S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range
Design support
Support Documents
RF_Fundamentals;
RF Fundamentals (2009-02-24)nxp_rf_manual_12th_edition;
RF Manual 12th Edition (2009-06-01)layout_bls6g3135-120;
layout_bls6g3135-120.zip (2009-01-15)Parametrics/similar products
| Type number | Package | Description | product application description | frange(MHz) | PL(W) | ?D(%) | Gp(dB) | VDS(V) |
|---|---|---|---|---|---|---|---|---|
| BLS6G3135-120 | SOT502A
(LDMOST) | LDMOS S-Band radar power transistor | Radar applications in the 3.1 GHz to 3.5 GHz frequency range | 3,100 - 3,500 | 120 | 43 | 11 | 32 |
| BLS6G3135S-120 | SOT502B
(LDMOST) | LDMOS S-Band radar power transistor | Radar applications in the 3.1 GHz to 3.5 GHz frequency range | 3,100 - 3,500 | 120 | 43 | 11 | 32 |
Similar products
BLS6G3135-120_6G3135S-120
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