BLW96

General description

N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.

The transistor has a 1/2" flange envelope with a ceramic cap. All leads are isolated from the flange.

Features

• diffused emitter ballasting resistors for an optimum temperature profile;
• gold sandwich metallization ensures excellent reliability.

The transistor has a 1/4" capstan envelope with ceramic cap. All leads are isolated from the stud.

Applications

• UHF linear amplifiers in television transmitters.

Print / Email

• Print this information
• Email this information

Disclaimers

• General product disclaimer
• Quality and reliability disclaimer