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Datasheet

BST82
(Product Specification)
26-Jul-00, 13 pages, 270 kB

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N-channel enhancement mode field-effect transistor

General description
Features
Products/packages
Chemical content
Pricing/ordering/availability
Samples
Applications
Block diagrams/pinning
Technical documents
Parametrics/similar products
Print/email

General description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOSÔ1 technology.

Product availability:
BST82 in SOT23.

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Features

  • TrenchMOSÔ technology
  • Very fast switching
  • Logic level compatible
  • Subminiature surface mount package.


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Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BST82BST82 T/R9337 331 10215Volume productionSOT23
(SST3) 		Tape reel smdStandard MarkingBST82
week 35, 2003
BST82BST82 /T39337 331 10235Volume productionSOT23
(SST3) 		Tape reel smdStandard MarkingBST82
week 35, 2003

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Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BST829337 331  10215  0.1700NAARROW ELECTRONICS9,0008/27/2008 Buy online Order samples
   NAFUTURE ELECTRONICS1,8008/27/2008 Buy online  
BST829337 331  10235  0.1700     not available
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Parametrics/similar products

Type numberPackageVDS(V)ConfigurationIDDC(A)RDS(on)(mOhm)
BST82SOT23
(SST3)		 100 Single N-channel 0.19 10000@5V
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Similar products

BST82 links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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