Datasheet
BU1506DX
(Product Specification)
01-Sep-97, 7 pages, 54 kB
BU1506DX - Silicon Diffused Power Transistor
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General description
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Features
- Products/packages
- Quality/reliability/chemical content
- Pricing/ordering/availability
- Samples
- Discontinued information
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Applications
- Block diagrams/pinning
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Design support
- Parametrics/similar products
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Print/email
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Disclaimers
This product has been withdrawn. Please contact your local
Sales or Distributor office
for more details.All information hereunder is subject to the subsequent disclaimers
General description
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
Features
- Glass passivated
- High maximum operating temperature
- Low leakage current
- Excellent stability
- Guaranteed avalanche energy absorption capability
- Recovery times ranging from 600 to 50 ns
- Soft-recovery switching characteristics
- Compact construction.
Applications
- High-voltage power supply units in, for example, X-ray or radar systems.
Design support
Application Notes
Support Documents