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BU1508AX

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Datasheet

BU1508AX
(Product Specification)
01-Sep-97, 7 pages, 59 kB

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BU1508AX - Silicon Diffused Power Transistor

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Disclaimers
This product has been withdrawn. Please contact your local Sales or Distributor office for more details.All information hereunder is subject to the subsequent disclaimers

General description

Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.

Features

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability
  • Recovery times ranging from 600 to 50 ns
  • Soft-recovery switching characteristics
  • Compact construction.

Applications

  • High-voltage power supply units in, for example, X-ray or radar systems.