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BUK7L3R3-34BRC

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Datasheet

BUK7L3R3-34BRC
(Product Specification)
26-Sep-07, 14 pages, 104 kB

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General description

N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance, internal gate resistor, ElectroStatic Discharge (ESD) protection diodes and clamping diodes that are guaranteed to prevent MOSFET avalanching.

Features

  • Internal gate resistor
  • Q101 compliant
  • 175 Cel rated
  • ESD and overvoltage protection

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
BUK7L3R3-34BRC9340 612 37127Volume productionSOT78C
(TO-220AB)
Horizontal, Rail PackStandard MarkingBUK7L3R3-34BRC

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
BUK7L3R3-34BRC9340 612  37127        Order samples

Applications

  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids
  • 12 V loads

Block diagrams/pinning

Parametrics/similar products

Type numberPackageVDS(V)ConfigurationIDDC(A)RDS(on)(mOhm)ESD protection(kV)Thermal Resistance ³(K/W)
BUK7L3R3-34BRCSOT78C
(TO-220AB)
34Single N-channel753.3@10V80.5

Similar products

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