Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking | ECCN |
|---|---|---|---|---|---|---|---|
| BUK9Y19-55B | BUK9Y19-55B,115 | 9340 583 66115 | Volume production | SOT669
(LFPAK) | Tape reel smd | Standard Marking |
| Type number | Orderable part number | Chemical content | RoHS | Leadfree Conversion date | RHF | IRF (FIT) | MTBF (hours) | MSL |
|---|---|---|---|---|---|---|---|---|
| BUK9Y19-55B | BUK9Y19-55B,115 | BUK9Y19-55B |
| week 1, 2005 |
| Type number | Ordering code(12NC) | Orderable part number | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|---|
| BUK9Y19-55B | 9340 583 66115 | BUK9Y19-55B,115 | 1.0900 | Order samples |
Support Documents
| Type number | Package | channel type | VDS(V) | ID(A) | QGD(nC) | Ptot(W) | QG(tot)(nC) | Qr(nC) | Package reference code | AEC-Q101 qualification status | RDSon [VGS = 10 V](mΩ) | RDSon [VGS = 4.5 V](mΩ) | RDSon [VGS = 5 V](mΩ) | VGS(th)(V) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BUK9Y19-55B | SOT669
(LFPAK) | N | 55.0 | 46.0 | 8.0 | 85.0 | 18.0 | 38.0 | LFPAK | Y | 17.3 | 21.0 | 40.0 | 2.3 (max) |