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BUK9Y19-55B

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Datasheet

BUK9Y19-55B
(Product Specification)
29-Feb-08, 12 pages, 189 kB

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BUK9Y19-55B - N-channel TrenchMOS logic level FET

General description
Features
Products/packages
Quality/reliability/chemical content
Pricing/ordering/availability
Samples
Discontinued information
Applications
Block diagrams/pinning
Design support
Parametrics/similar products
Print/email
Disclaimers
All information hereunder is subject to the subsequent disclaimers

General description

Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features

  • 175 Cel rated
  • Logic level compatible
  • Q101 compliant
  • Very low on-state resistance

Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
BUK9Y19-55BBUK9Y19-55B,1159340 583 66115Volume productionSOT669
(LFPAK)
Tape reel smdStandard Marking

Quality/reliability/chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
BUK9Y19-55BBUK9Y19-55B,115BUK9Y19-55B
week 1, 2005

Quality and reliability disclaimer

Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BUK9Y19-55B9340 583 66115  BUK9Y19-55B,115  1.0900      Order samples

Applications

  • 12 V and 24 V loads
  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids

Block diagrams/pinning

Parametrics/similar products

Type numberPackagechannel typeVDS(V)ID(A)QGD(nC)Ptot(W)QG(tot)(nC)Qr(nC)Package reference codeAEC-Q101
qualification
status
RDSon
[VGS = 10 V](mΩ)
RDSon
[VGS = 4.5 V](mΩ)
RDSon
[VGS = 5 V](mΩ)
VGS(th)(V)
BUK9Y19-55BSOT669
(LFPAK)
N55.046.08.085.018.038.0LFPAKY17.321.040.02.3 (max)