Datasheet
IRF640; IRF640S
(Product Specification)
01-Aug-99, 9 pages, 0 kB
IRF640; IRF640S - N-channel TrenchMOS (tm) transistor
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General description
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Features
- Products/packages
- Quality/reliability/chemical content
- Pricing/ordering/availability
- Samples
- Discontinued information
- Applications
- Block diagrams/pinning
- Design support
- Parametrics/similar products
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Print/email
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Disclaimers
This product has been withdrawn. Please contact your local
Sales or Distributor office
for more details.All information hereunder is subject to the subsequent disclaimers
General description
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF640S is supplied in the SOT404 (D²PAK) surface mounting package.
Features
- ?Trench? technology
- Low on-state resistance
- Fast switching
- Low thermal resistance