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MX0912B351Y

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Datasheet

MX0912B351Y
(Product Specification)
19-Feb-97, 12 pages, 77 kB

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General description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange. It is mounted in common base configuration and specified in class C.

Features

  • Interdigitated structure; high emitter efficiency
  • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Input and output matching cell allows an easier design of circuits. Columns

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
MX0912B351YMX0912B351Y TRAY9340 335 50114Volume productionSOT439A
(CDFM2)
Blister packStandard MarkingNot available
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
MX0912B351Y9340 335  50114  NAAVNET ELECTRONICS MARKETING33111/21/2008 Buy online Order samples

Applications

Intended for use in common base class C broadband pulse power amplifier from 960 to 1215 MHz for TACAN application.

Parametrics/similar products

Type numberPackageDescriptionPOWER
GAIN(dB)
ApplicationEfficiency(%)LOAD
POWER(W)
tp(us)Frequency(MHz)Operating voltage(VDC)Duty cycle(%)
MX0912B351YSOT439A
(CDFM2)
Avionics Bipolar RF POWER Transistor7.5Avionics - TACAN, JTIDS, DME4537510960 - 12155010

Similar products

MX0912B351Y links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.

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