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Datasheet

PBRP113ZT
(Product Specification)
16-Jan-08, 12 pages, 115 kB

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General description

800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBRN113ZT.

Features

  • 800 mA repetitive peak output current
  • Low collector-emitter saturation voltage VCEsat
  • High current gain hFE
  • Reduces component count
  • Built-in bias resistors
  • Reduces pick and place costs
  • Simplifies circuit design
  • +-10 pct resistor ratio tolerance

Products/packages

Type numberNorth American Type numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
PBRP113ZTPBRP113ZT T/R9340 589 88215Volume productionSOT23
(SOT3)
Tape reel smdStandard MarkingPBRP113ZT

Pricing/ordering/availability

Type numberOrdering code(12NC)Indicative price/unit($)RegionDistributorIn stockInventory dateBuy onlineSamples
PBRP113ZT9340 589  88215        Order samples

Applications

  • Digital application in automotive and industrial segments
  • Switching loads
  • Medium current peripheral driver


Related applications
Cellular phone - MMS functionality
Set-top box - MMS functionality

Block diagrams/pinning

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