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PBSS2540E

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Datasheet

PBSS2540E
(Product Specification)
04-May-05, 11 pages, 110 kB

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PBSS2540E - 40 V, 500 mA NPN low VCEsat (BISS) transistor

General description
Features
Products/packages
Quality/reliability/chemical content
Pricing/ordering/availability
Samples
Discontinued information
Applications
Block diagrams/pinning
Design support
Parametrics/similar products
Print/email
Disclaimers
All information hereunder is subject to the subsequent disclaimers

General description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

PNP complement: PBS3540E.

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Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability: IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

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Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingECCN
PBSS2540EPBSS2540E,1159340 591 69115Volume productionSOT416
(SC-75) 		Tape reel smdStandard Marking

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Quality/reliability/chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree Conversion dateRHFIRF (FIT)MTBF (hours)MSL
PBSS2540EPBSS2540E,115PBSS2540E
Always Pb-free

Quality and reliability disclaimer

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Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
PBSS2540E9340 591 69115  PBSS2540E,115  0.0900      Order samples
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Applications

  • DC-to-DC conversion
  • MOSFET gate driving
  • Motor control
  • Charging circuits
  • Low power switches (e.g. motors, fans)


Related applications
LCD TV - MMS functionality
Set-top box - MMS functionality

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Block diagrams/pinning

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