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PBSS5160U

Selection guide

Datasheet

PBSS5160U
(Product Specification)
02-Oct-08, 14 pages, 127 kB

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General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4160U.

Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Products/packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarkingChemical contentLeadfree conversion date
PBSS5160UPBSS5160U,1159340 581 23115Volume productionSOT323
(SC-70)
Tape reel smdStandard MarkingPBSS5160U
Always Pb-free

Pricing/ordering/availability

Type numberOrdering code(12NC)Orderable part numberIndicative price/unit($)RegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
PBSS5160U9340 581 23115  PBSS5160U,115  0.1100      Order samples

Applications

  • High voltage DC-to-DC conversion
  • High voltage MOSFET gate driving
  • High voltage motor control
  • High voltage power switches (e.g. motors, fans)
  • Automotive applications

Block diagrams/pinning

Design support

Support Models

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