PMEM4030NS

General description

Combination of a NPN transistor with low V_CEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT96-1 (SO8/MS-012) small plastic package. PNP complement: PMEM4030PS.

Features

• 1 W total power dissipation
• High current capability up to 2 A
• Reduces Printed-Circuit Board (PCB) area required
• Reduces pick and place costs
• Small plastic Surface Mounted Device (SMD) package
• Transistor
• Low collector-emitter saturation voltage
• Diode
• High-speed switching
• Low forward voltage
• Guard ring protected

Applications

• DC-to-DC converters
• Inductive load drivers
• General-purpose load drivers

Block diagrams/pinning

Design support

Application Notes

AN10117; Medium Power Transistors and Rectifiers for Power Management Applications (2003-12-09)

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Disclaimers

• General product disclaimer
• Quality and reliability disclaimer