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PSMN2R5-30YL
Datasheet
General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.
Features and benefits
- High efficiency due to low switching and conduction losses
- Suitable for logic level gate drive sources
Quick reference
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| VDS | drain-source voltage | Tj ≥ 25 °C; Tj ≤ 175 °C | 30 | V | ||
| ID | drain current | Tmb = 25 °C; VGS = 10 V [0] | 100 | A | ||
| Ptot | total power dissipation | Tmb = 25 °C | 88 | W | ||
| Dynamic characteristics | ||||||
| QGD | gate-drain charge | VGS = 4.5 V; ID = 10 A; VDS = 12 V | 6.5 | nC | ||
| QG(tot) | total gate charge | VGS = 4.5 V; ID = 10 A; VDS = 12 V | 27 | nC | ||
| Static characteristics | ||||||
| RDSon | drain-source on-state resistance | VGS = 10 V; ID = 15 A; Tj = 25 °C | 1.79 | 2.4 | mΩ | |
Similar Products
PSMN2R5-30YL links to the similar products page containing an overview of products that are similar in function or related to the type number(s) as listed on this page. The similar products page includes products from the same catalog tree(s), relevant selection guides and products from the same functional category.
Pinning information
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | S | source |  |  |
| 2 | S | source | ||
| 3 | S | source | ||
| 4 | G | gate | ||
| mb | D | mounting base; connected to drain |
Pricing/ordering/availability
| Type number | Ordering code(12NC) | Orderable part number | Indicative price/unit($) | Region | Distributor | In stock | Order quantity | Inventory date | Buy online | Samples |
|---|---|---|---|---|---|---|---|---|---|---|
| PSMN2R5-30YL | 934063071115 | PSMN2R5-30YL,115 | NA | MOUSER ELECTRONICS | 1,475 | 00 | 3/18/2010 | Buy online | Order samples | |
| NA | NEWARK | 25 | 00 | 3/18/2010 | Buy online | |||||
| EU | FARNELL | 270 | 00 | 3/18/2010 | Buy online | |||||
| NA | DIGI-KEY CORPORATION | 1,500 | 00 | 3/18/2010 | Buy online | |||||
| NA | DIGI-KEY CORPORATION | 2,919 | 00 | 3/18/2010 | Buy online | |||||
| NA | MOUSER ELECTRONICS | 1,475 | 00 | 3/18/2010 | Buy online | |||||
| JAPAN | CHIP ONE STOP | yes | 00 | 03/19/2010 | Buy online |
Products/packages
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking | ECCN |
|---|---|---|---|---|---|---|---|
| PSMN2R5-30YL | PSMN2R5-30YL,115 | 9340 630 71115 | Volume production | SOT669
(LFPAK) | Tape reel smd | Standard Marking |
Quality/reliability/chemical content
| Type number | Orderable part number | Chemical content | RoHS | Leadfree Conversion date | RHF | IRF (FIT) | MTBF (hours) | MSL |
|---|---|---|---|---|---|---|---|---|
| PSMN2R5-30YL | PSMN2R5-30YL,115 | PSMN2R5-30YL |
|
Design support
Application note
Logic level VGS ratings for NXP power MOSFETs (v.1.0, 18-Jul-08)LFPAK MOSFET thermal design guide (v.1.1, 14-Jan-10)
Leaflet
LFPAK - The Toughest Power SO8 (v.1.2, 17-Mar-10)25 V to 100 V MOSFETs in Power-SO8 (v.1.0, 13-Jan-10)