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RX1214B170W

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Datasheet

RX1214B170W
(Product Specification)
18-Feb-97, 12 pages, 64 kB

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RX1214B170W - Microwave power transistor

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This product has been withdrawn. Please contact your local Sales or Distributor office for more details.All information hereunder is subject to the subsequent disclaimers

General description

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with base connected to flange.

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Features

  • Suitable for short and medium pulse applications up to 1 ms pulse width, 10% duty factor
  • Diffused emitter ballasting resistors improve ruggedness
  • Interdigitated emitter-base structure provides high emitter efficiency
  • Gold metallization with barrier realizes very stable characteristics and excellent lifetime
  • Multicell geometry improves power sharing and reduces thermal resistance
  • Internal input and output prematching networks allow an easier design of circuits.

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Applications

Intended for use in common-base class C broadband pulsed power amplifiers for radar applications in the 1.2 to 1.4 GHz band. Also suitable for long pulse, heavy duty operation within this band.

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