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RZ1214B35Y

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Datasheet

RZ1214B35Y
(Product Specification)
18-Feb-97, 8 pages, 60 kB

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RZ1214B35Y - NPN microwave power transistor

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This product has been withdrawn. Please contact your local Sales or Distributor office for more details.All information hereunder is subject to the subsequent disclaimers

General description

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

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Features

  • Interdigitated structure provides high emitter efficiency
  • Diffused emitter ballasting resistor providing excellent current sharing and withstanding a high VSWR
  • Gold metallization realizes very stable characteristics and excellent lifetime
  • Multicell geometry gives good balance of dissipated power and low thermal resistance
  • Internal input matching ensures good stability and allows an easier design of wideband circuits.

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Applications

    ? Common base class-C wideband pulsed power amplifiers for L-band radar applications in the 1.2 to 1.4 GHz band.

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