N-channel TrenchMOS standard level FET
Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
|VDS||drain-source voltage||Tj ≥ 25 °C; Tj ≤ 175 °C||30||V|
|ID||drain current||VGS = 10 V; Tmb = 25 °C ||120||A|
|Ptot||total power dissipation||Tmb = 25 °C||349||W|
|RDSon||drain-source on-state resistance||VGS = 10 V; ID = 25 A; Tj = 25 °C||1.05||1.3||mΩ|
|QGD||gate-drain charge||VGS = 10 V; ID = 25 A; VDS = 24 V||49.8||nC|
|Pin||Symbol||Description||Simplified outline||Graphic symbol|
|mb||D||mounting base; connected to drain|
|Package Version||Package Name||Package Description||Reference Codes||Issue Date|
|SOT404||D2PAK||plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)||2013-02-25|
Sample orders normally take 2-4 days for delivery.
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