BUK7Y102-100B

N-channel TrenchMOS standard level FET


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Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • Q101 compliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V, 24 V and 42 V loads
  • Automotive systems
  • DC-to-DC converters
  • General purpose power switching
  • Solenoid drivers
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageTj ≥ 25 °C; Tj ≤ 175 °C100V
IDdrain currentVGS = 10 V; Tmb = 25 °C15A
Ptottotal power dissipationTmb = 25 °C60W
Static characteristics
RDSondrain-source on-state resistanceVGS = 10 V; ID = 5 A; Tj = 25 °C86102mΩ
Avalanche ruggedness
EDS(AL)Snon-repetitive drain-source avalanche energyID = 15 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped35mJ
Dynamic characteristics
QGDgate-drain chargeID = 5 A; VDS = 80 V; VGS = 10 V4.7nC

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BUK7Y102-100BBUK7Y102-100B,1159340 633 21115Volume productionSOT669
(LFPAK; Power-SO8) 		Tape reel smd710210B

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1SsourceSOT669 (LFPAK; Power-SO8)
2Ssource
3Ssource
4Ggate
mbDmounting base; connected to drain

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BUK7Y102-100BBUK7Y102-100B,115BUK7Y102-100B11
Quality and reliability disclaimer

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NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfN-channel TrenchMOS standard level FET (v.3.0)2010-04-12
Application notepdfPower MOSFET single-shot and repetitive avalanche ruggedness rating (v.2.1)2010-03-17
Application notepdfLFPAK MOSFET thermal design guide (v.2.0)2011-01-27
Application notepdfLFPAK MOSFET thermal design guide - Part 2 (v.2.0)2011-11-16
Application notepdfUnderstanding Power MOSFET Datasheet Parameters (v.1.0)2012-04-17
BrochurepdfPower MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)2011-05-20
LeafletpdfLFPAK - The Toughest Power SO8 (v.1.2)2010-03-17
LeafletpdfHigh reliability LFPAK MOSFETs for Automotive Power Applications (v.1.1)2010-03-18
Selection guidepdfNXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)2012-01-19
SPICE modellibBUK7Y102-100B SPICE model (v.2.0)2012-04-12
Thermal designpdfBUK7Y102-100B_RC_Thermal_Model (v.1.0)2010-03-29
Thermal modelpdmlBUK7Y102-100B Thermal model (v.1.0)2009-06-23

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BUK7Y102-100B9340 633 21115BUK7Y102-100B,115EUAVNET EXPRESS EUROPE1,5005/24/2012Buy online 
   NADIGI-KEY CORPORATION1,1615/24/2012Buy online 
   NANEWARK/ELEMENT141355/24/2012Buy online 
   EUFARNELL1355/24/2012Buy online 
   ASIAELEMENT14 APAC1355/24/2012Buy online 

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