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Known Good Die (KGD) program
NXP's bare power die program overcomes any attendant difficulties of bare die assembly to deliver high quality, fully tested devices. Not previously possible, full power MOSFET device testing is carried out using a specially designed test head, covering high current and ruggedness performance, and precise on-resistance measurement.
Key benefits
- Significantly reduced RDS(on) measured to 0.1 Ω accuracy
- Improved dissipation performance
- Application specific die design possible
- Greatly reduced thermal resistance as silicon is mounted directly onto module substrates
- Continuous high-temperature operation (typically > 175°C)
- Continuous high-current operation (typically > 200 A)
- Very high reliability once assembled into a hybrid module
- Quality assured through 100 % testing of each and every individual power die
- Avalanche testing and visual inspection
- High current testing 25 A
- Tape & reel delivery format
Key applications
- EPAS (Electric Power Assisted Steering)
- ISA (Integrated Starter Alternator)
Product overview
BUK9004-30A
BUK9005-40A
BUK9006-55A