Bipolar transistors

Keep your design’s power consumption and heat dissipation to a minimum

Our low VCEsat transistors certainly live up their name as 'breakthrough in small signal' (BISS) transistors. Offering low power losses with higher energy efficiency than standard transistors in the same package, they are available in smaller packages that save PCB space.

New and updated products

PBSS4160PAN

60 V, 1 A NPN/NPN low VCEsat (BISS) transistor

PBSS5160PAP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor



Featured product

PBSS4112PAN: 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor

Datasheet (pdf)

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.



Key features and benefits

  • Low collector-emitter saturation voltage, VCEsat, and corresponding resistance, RCEsat, (down to <30 mOhm)
  • Optimum power performance while saving space
  • High collector current capability IC and ICM
  • Simpler circuit layouts with increased flexibility
  • High collector current gain hFE at high IC
  • Lower pick-and-place costs
  • High performance in reduced board space
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

  • Portable devices e.g. mobile phone, DSC, PDA
  • Power management and battery chargers
  • Load switches
  • DC/DC converter
  • LED driver circuits in LCD backlight units

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