Bipolar transistors

Keep your design’s power consumption and heat dissipation to a minimum

Our low VCEsat transistors certainly live up their name as 'breakthrough in small signal' (BISS) transistors. Offering low power losses with higher energy efficiency than standard transistors in the same package, they are available in smaller packages that save PCB space.

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New and updated products

PBSS2515MB

15 V, 0.5 A NPN low VCEsat (BISS) transistor

PBSS2540MB

40 V, 0.5 A NPN low VCEsat (BISS) transistor



Key features and benefits

  • Low collector-emitter saturation voltage, VCEsat, and corresponding resistance, RCEsat, (down to <30 mOhm)
  • Optimum power performance while saving space
  • High collector current capability IC and ICM
  • Simpler circuit layouts with increased flexibility
  • High collector current gain hFE at high IC
  • Lower pick-and-place costs
  • High performance in reduced board space
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

  • Portable devices e.g. mobile phone, DSC, PDA
  • Power management and battery chargers
  • Load switches
  • DC/DC converter
  • LED driver circuits in LCD backlight units

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Descriptive summary

Choose from single, double and high-voltage transistors, or load switches which combine low VCEsat transistor and RET in a single package. BISS transistors deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology). This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

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