Low VCEsat (BISS) transistors

Keep your design’s power consumption and heat dissipation to a minimum

Our low VCEsat transistors certainly live up their name as 'breakthrough in small signal' (BISS) transistors. Offering low power losses with higher energy efficiency than standard transistors in the same package, they are available in smaller packages that save PCB space.

Key benefits

• Optimum power performance while saving space
• Simpler circuit layouts with increased flexibility
• Lower pick-and-place costs

Key features

• Low collector-emitter saturation voltage, V_CEsat, and corresponding resistance, R_CEsat, (down to < 30 mOhm)
• High collector current capability I_C and I_CM
• High collector current gain h_FE at high I_C
• High performance in reduced board space
• Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

• Portable devices e.g. mobile phone, DSC, PDA
• Power management and battery chargers
• Load switches
• DC/DC converter
• LED driver circuits in LCD backlight units

Descriptive summary

Choose from single, double and high-voltage transistors, or load switches which combine low VCEsat transistor and RET in a single package. BISS transistors deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology). This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

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