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Low VCEsat (BISS) transistors

Selection guide
Low VCEsat (BISS) transistors
Low VCEsat (BISS) transistors NPN
Low VCEsat (BISS) transistors PNP
Low VCEsat (BISS) transistors double (complex)
Single low VCEsat (BISS) transistors
Low VCEsat (BISS) / Schottky diode modules
Low VCEsat (BISS) load switches

Keep your design’s power consumption and heat dissipation to a minimum

Our low VCE(sat) [BISS] devices are the perfect solution for keeping your design’s power consumption and heat dissipation to a minimum.

Key features

  • Low collector-emitter saturation voltage, VCE(sat), and corresponding resistance, RCE(sat) (down to < 30 mOhm)
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High performance in reduced board space
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

  • Medium power peripheral drivers e.g. fan, motor
  • Strobe flash units for DSC and mobile phones
  • Inverter applications e.g. TFT displays
  • Power switch for LAN and ADSL systems
  • Medium power DC-to-DC conversion

Descriptive summary

BISS transistors deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology). This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.