Low VCEsat (BISS) / Schottky diode modules

Low VCEsat BISS transistor / MEGA Schottky diode modules

Combining a low V_CEsat (BISS) transistor and a low V_F (MEGA) Schottky rectifier into a single small-signal package, NXP BISS transistor/MEGA Schottky modules deliver the ultimate in space and energy efficiency.

Key benefits

• Higher power density
• Higher efficiency
• Reduced component count
• Cost reduction potential
• Space savings of up to 32%

Key features

• Combination of low V_CEsat (BISS) transistor and low V_F (MEGA) Schottky rectifier in one package
• High forward current capability
• Low power dissipation

Key applications

• Push-pull driver
• DC-to-DC conversion
• Inductive load driver

Descriptive summary

MEGA Schottky diodes/BISS transistor modules provide high current handling capabilities and industry-leading performance. A cost-effective alternative to fully discrete options and the well-known MOSFET / diode module, they are ideal for DC/DC conversion and low-power applications.

MEGA Schottky diodes/BISS transistor modules high-quality products are housed in compact SOT457 (SC-74) and SOT353 (SC-88A) packages. They are ideal for systems with severe space constrains including digital cameras, cell phones, PDAs and other portable equipment.

Step-down DC/DC converter:

Power LED driver:

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