Bipolar transistors

Array (double) small signal bipolar transistor

If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).

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New and updated products

PBSS5160PAP

60 V, 1 A PNP/PNP low VCEsat (BISS) transistor

PBSS4160PANP

60 V, 1 A NPN/PNP low VCEsat (BISS) transistor



Key features and benefits

  • High performance in reduced board space
  • High collector current gain hFE at high IC
  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat (down to <30 mΩ)
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
  • High collector current capability IC and ICM

Key applications

  • Power switch for LAN and ADSL systems / medium power DC-to-DC conversion
  • Inverter applications e.g. TFT displays
  • Medium power peripheral drivers e.g. fan, motor
  • Battery chargers / loadswitches
  • Strobe flash units for digital still cameras and mobile phones

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Descriptive summary

Low VCEsat (BISS) transistors are ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

Dual load switch using double RETs and double BISS transistors

Products

DIV Table experiment (Column Based)




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