Exceedingly low capacitance (<1 pF)

Low capacitance (<1 pF) Schottky diodes are well suited to all high frequency applications. They are used specifically for the gain control stages in the RF part of a mobile phone. Some devices have a capacitance 94% lower than an industry standard BAT54, or less than one third of existing low capacitance diodes such as the BAS40, achieved with no trade off in breakdown voltage specification.

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Key features and benefits

  • Low diode capacitance(<1 pF)
  • (Very) low diode capacitance
  • Low forward voltage
  • (Very) low forward voltage
  • Ultra-small plastic SMD package (SOD882)
  • Single and triple-isolated diode
  • Single, double and triple configurations available
  • (Ultra / very) small package
  • Ultra-high switching speed

Key applications

  • Digital applications:
    • ultra high-speed switching
    • clamping circuits
  • RF applications:
    • diode ring mixer
    • RF detector
    • RF voltage doubler

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Descriptive summary

Figure 1. Low-cost cellular phone front-end designs

Products

Type numberDescriptionStatusQuick access
1PS10SB82Schottky barrier diode Download datasheet
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1PS66SB174 V, 30 mA low C_d Schottky barrier diode Download datasheet
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1PS66SB8215 V, 30 mA low Cd Schottky barrier diodes Download datasheet
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1PS70SB82Schottky barrier (double) diodes Download datasheet
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1PS70SB84Schottky barrier (double) diodes Download datasheet
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1PS70SB85Schottky barrier (double) diodes Download datasheet
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1PS70SB86Schottky barrier (double) diodes Download datasheet
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1PS76SB174 V, 30 mA low C_d Schottky barrier diode Download datasheet
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1PS79SB174 V, 30 mA low C_d Schottky barrier diode Download datasheet
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1PS88SB8215 V, 30 mA low Cd Schottky barrier diodes Download datasheet
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BAT17Schottky barrier diode Download datasheet
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PMBD353Schottky barrier double diode Download datasheet
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PMBD354Schottky barrier double diode Download datasheet
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