NPN Wideband Silicon RF Transistor

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Product Details

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Features

  • 40 GHz fT silicon technology
  • High output third-order intercept point 27 dBm at 1.8 GHz
  • Low noise high linearity RF transistor

Target Applications

  • Analog/digital cordless applications
  • LTE, cellular, UMTS
  • SDARS second stage LNA
  • X-band high output buffer amplifier
  • ZigBee

Part numbers include: BFU660F.

Documentation

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4 documents

Design Resources

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Design Files

1 design file

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