NXP Semiconductors


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12 - 40 V NPN

Selection guide
12 - 40 V NPN
2PD2150 - 20 V; 3 A; SOT89 (SC-62)
PBSS2540M - 40 V; 0.5 A; SOT883 (SC-101)
PBSS2515E - 15 V; 0.5 A; SOT416 (SC-75)
PBSS2515M - 15 V; 0.5 A; SOT883 (SC-101)
PBSS2540E - 40 V; 0.5 A; SOT416 (SC-75)
PBSS301ND - 20 V; 4 A; SOT457 (SC-74)
PBSS301NX - 12 V; 5.3 A; SOT89 (SC-62)
PBSS301NZ - 12 V; 5.8 A; SOT223 (SC-73)
PBSS302ND - 40 V; 4 A; SOT457 (SC-74)
PBSS302NX - 20 V; 5.3 A; SOT89 (SC-62)
PBSS302NZ - 20 V; 5.8 A; SOT223 (SC-73)
PBSS303NX - 30 V; 5.1 A; SOT89 (SC-62)
PBSS303NZ - 30 V; 5.5 A; SOT223 (SC-73)
PBSS4120T - 20 V; 1 A; SOT23
PBSS4130T - 30 V; 1 A; SOT23
PBSS4140T - 40 V; 1 A; SOT23
PBSS4140U - 40 V; 1 A; SOT323 (SC-70)
PBSS4140V - 40 V; 1 A; SOT666
PBSS4220V - 20 V; 2 A; SOT666
PBSS4230T - 30 V; 2 A; SOT23
PBSS4240T - 40 V; 2 A; SOT23
PBSS4240V - 40 V; 2 A; SOT666
PBSS4240Y - 40 V; 2 A; SOT363 (SC-88)
PBSS4320T - 20 V; 3 A; SOT23
PBSS4320X - 20 V; 3 A; SOT89 (SC-62)
PBSS4330X - 30 V; 3 A; SOT89 (SC-62)
PBSS4420D - 20 V; 4 A; SOT457 (SC-74)
PBSS4440D - 40 V; 4 A; SOT457 (SC-74)
PBSS4520X - 20 V; 5 A; SOT89 (SC-62)
PBSS4540X - 40 V; 5 A; SOT89 (SC-62)
PBSS4540Z - 40 V; 5 A; SOT223 (SC-73)
PMMT491A - 40 V; 1 A; SOT23

Latest products

PBSS4420D

20 V, 4 A NPN low VCEsat (BISS) transistor

Datasheet (124Kb)

Latest application notes

AN10405 1 (400Kb)
AN10393 1 (236Kb)

If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).


This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

Key features

  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat(down to < 30 mOhm)
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High performance in reduced board space
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

  • Medium power peripheral drivers e.g. fan, motor
  • Strobe flash units for DSC and mobile phones
  • Inverter applications e.g. TFT displays
  • Power switch for LAN and ADSL systems
  • Medium power DC-to-DC conversion
  • Battery chargers
  • Loadswitches

Information resources