NXP Semiconductors


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NPN BISS
110 - 400 V NPN
12 - 40 V NPN
50 - 100 V NPN

Latest products

PBSS302ND

40 V, 4 A NPN low VCEsat (BISS) transistor

Datasheet (136Kb)

Latest application notes

AN10405 1 (400Kb)
AN10393 1 (236Kb)

If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).


This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

Key features

  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat(down to < 30 mOhm)
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High performance in reduced board space
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

  • Medium power peripheral drivers e.g. fan, motor
  • Strobe flash units for DSC and mobile phones
  • Inverter applications e.g. TFT displays
  • Power switch for LAN and ADSL systems
  • Medium power DC-to-DC conversion
  • Battery chargers
  • Loadswitches

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