NXP Semiconductors


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12 - 40 V PNP

Selection guide
12 - 40 V PNP
2PB1424 - 20 V; 3000 mA; SOT89 (SC-62)
PBSS3515M - 15 V; 0.5 A; SOT883 (SC-101)
PBSS301PD - 20 V; 4 A; SOT457 (SC-74)
PBSS301PX - 12 V; 5.3 A; SOT89 (SC-62)
PBSS301PZ - 12 V; 5.7 A; SOT223 (SC-73)
PBSS302PD - 40 V; 4 A; SOT457 (SC-74)
PBSS302PX - 20 V; 5.1 A; SOT89 (SC-62)
PBSS302PZ - 20 V; 5.5 A; SOT223 (SC-73)
PBSS303PX - 30 V; 5.1 A; SOT89 (SC-62)
PBSS303PZ - 30 V; 5.3 A; SOT223 (SC-73)
PBSS3515E - 15 V; 0.5 A; SOT416 (SC-75)
PBSS3540E - 40 V; 0.5 A; SOT416 (SC-75)
PBSS3540M - 40 V; 0.5 A; SOT883 (SC-101)
PBSS5120T - 20 V; 1 A; SOT23
PBSS5130T - 30 V; 1 A; SOT23
PBSS5140T - 40 V; 1 A; SOT23 (TO-236AB)
PBSS5140U - 40 V; 1 A; SOT323 (SC-70)
PBSS5140V - 40 V; 1 A; SOT666
PBSS5220T - 20 V; 2 A; SOT23
PBSS5220V - 20 V; 2 A; SOT666
PBSS5230T - 30 V; 2 A; SOT23
PBSS5240T - 40 V; 2 A; SOT23
PBSS5240V - 40 V; 2 A; SOT666
PBSS5240Y - 40 V; 2 A; SOT363 (SC-88)
PBSS5320D - 20 V; 3 A; SOT457 (SC-74)
PBSS5320T - 20 V; 3 A; SOT23
PBSS5320X - 20 V; 3 A; SOT89 (SC-62)
PBSS5330X - 30 V; 3 A; SOT89 (SC-62)
PBSS5420D - 20 V; 4 A; SOT457 (SC-74)
PBSS5440D - 40 V; 4 A; SOT457 (SC-74)
PBSS5520X - 20 V; 5 A; SOT89 (SC-62)
PBSS5540X - 40 V; 5 A; SOT89 (SC-62)
PBSS5540Z - 40 V; 5 A; SOT223 (SC-73)
PMMT591A - 40 V; 1 A; SOT23

Latest products

PBSS5420D

20 V, 4 A PNP low VCEsat (BISS) transistor

Datasheet (124Kb)

Latest user manuals

UM10155 2 (179Kb)

Latest application notes

AN10405 1 (400Kb)
AN10360 1 (481Kb)

If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).


This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.

Key features

  • Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat(down to < 30 mOhm)
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High performance in reduced board space
  • Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK

Key applications

  • Medium power peripheral drivers e.g. fan, motor
  • Strobe flash units for DSC and mobile phones
  • Inverter applications e.g. TFT displays
  • Power switch for LAN and ADSL systems
  • Medium power DC-to-DC conversion
  • Battery chargers
  • Loadswitches

Information resources