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110 - 400 V PNP
If your design has to keep power consumption and heat dissipation to a minimum, then our low VCEsat (BISS) devices are the perfect solution. They deliver exceptionally low power consumption and have a high collector current capability (due to an innovative mesh-emitter technology).
This makes them ideal for a host of power sensitive applications, including portable products, telecom and automotive systems, and household appliances, where low heat dissipation is often a critical factor.
Key features
- Low collector-emitter saturation voltage VCEsat and corresponding resistance RCEsat(down to < 30 mOhm)
- High collector current capability IC and ICM
- High collector current gain hFE at high IC
- High performance in reduced board space
- Cost effective replacement for larger, medium power and power transistors such as SOT89, SOT223, TO-126 and DPAK
Key applications
- Medium power peripheral drivers e.g. fan, motor
- Strobe flash units for DSC and mobile phones
- Inverter applications e.g. TFT displays
- Power switch for LAN and ADSL systems
- Medium power DC-to-DC conversion
- Battery chargers
- Loadswitches
Information resources
- Breakthrough in Small-Signal; Low VCEsat (BISS) transistors
- Medium power bipolar transistors (only available as pdf)
- NXP BISS high voltage transistors in SOT23, SOT89 (SC-62) and SOT223 (SC-73)
- Ultra-low VCEsat (BISS) transistors in SOT223 (SC-73)
- Ultra-low VCEsat (BISS) transistors in SOT457 (SC-74)
- Ultra-low VCEsat (BISS) transistors in SOT89 (SC-62)
- Automotive small-signal solutions
- NXP ultra-small diodes and transistors for portable applications (only available as pdf)
- Application Note: BISS transistors and their applications
- Application Note: BISS transistors and MEGA Schottky rectifiers - improved technologies for discrete semiconductors
- Application Note: BISS transistors & MEGA Schottky rectifiers for DC/DC Converter
- Application Note: Medium Power Transistors and Rectifiers for Power Management Applications