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Low Vf (MEGA) Schottky diode / Low VCEsat (BISS) transistor modules
Combining a low VF (MEGA) Schottky rectifier and a low VCEsat (BISS) transistor into a single small-signal package,
NXP MEGA Schottky / BISS transistor modules deliver the ultimate in space and energy efficiency.
They provide high current handling capabilities and industry-leading performance. A cost-effective alternative to fully discrete options and the well-known MOSFET / diode module, they are ideal for DC/DC conversion and low-power applications.
These high-quality products are housed in compact SOT96 (SO8), SOT457 (SC-74) and SOT353 (SC-88A) packages. They are ideal for systems with severe space constrains including digital cameras, cell phones, PDAs and other portable equipment.
Key features
- Combination of low VF (MEGA) Schottky rectifier and low VCEsat (BISS) transistor in one package
- High forward current capability
- Low power dissipation
Key benefits
- Reduced component count
- Space savings of up to 32%
- Higher efficiency
- Higher power density
- Cost reduction potential
- Simplified circuit design
Key applications
- DC/DC conversion
- Inductive load driver
- Push-pull driver
Inductive load driver
Power supply circuit