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Schottky rectifiers (>200 mA)
Maximum performance from the minimum size
Our new, low voltage-drop MEGA (Maximum Efficiency General Application) Schottky diodes offer high performance in extremely small packages. Further extending our discretes portfolio, the MEGA Schottky family is a prime example of NXP's commitment to the continual development of these essential multimarket semiconductors.
Based on an innovative wafer production process that enables high current handling and low power dissipation in a small footprint, these highly efficient devices allow designers to replace conventional Schottky diodes with smaller, more cost-effective products.
Designed for use in a wide range of applications, MEGA Schottky diodes reduce overall system costs and enhance flexibility in circuit design. These small, high performance diodes allow designers to access increasingly smaller package options and enable real reductions in power usage, opening the way to extended battery lifetimes for portable devices - a critical market advantage.
Key features
- Very low forward voltage-drop, VF
- High continuous current capability, IF
- High peak current capability, IFSM
- Low power dissipation
- Less heat generation
Key benefits
- High efficiency (due to extremely low forward voltage)
- Ultra-small, low-profile surface-mount package for economic use of space
- Excellent size / performance ratio
Key applications
- Low-voltage rectification
- Power management circuits - especially DC/DC conversion
- Reverse polarity protection
- Low power applications
- Free-wheeling diode for inductive loads in motors and relays