BUK6E3R4-40C

N-channel TrenchMOS intermediate level FET


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Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • AEC Q101 compliant
  • Suitable for intermediate level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V Automotive systems
  • Electric and electro-hydraulic power steering
  • Motors, lamps and solenoid control
  • Start-Stop micro-hybrid applications
  • Transmission control
  • Ultra high performance power switching
All information on this product information page is subject to the subsequent disclaimers:
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Parametric search

Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageTj ≥ 25 °C; Tj ≤ 175 °C40V
IDdrain currentVGS = 10 V; Tmb = 25 °C [0]100A
Ptottotal power dissipationTmb = 25 °C204W
Static characteristics
RDSondrain-source on-state resistanceVGS = 10 V; ID = 25 A; Tj = 25 °C3.053.6mΩ
Avalanche ruggedness
EDS(AL)Snon-repetitive drain-source avalanche energyID = 100 A; Vsup ≤ 40 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped368mJ
Dynamic characteristics
QGDgate-drain chargeID = 25 A; VDS = 32 V; VGS = 10 V42nC

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Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BUK6E3R4-40CBUK6E3R4-40C,1279340 642 24127Volume productionSOT226
(I2PAK) 		Horizontal, Rail PackBUK6E3R4-40C

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1GgateSOT226 (I2-PAK)
2DDrain
3Ssource
mbDmounting base; connected to drain

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BUK6E3R4-40CBUK6E3R4-40C,127BUK6E3R4-40CNANA
Quality and reliability disclaimer

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfN-channel TrenchMOS intermediate level FET (v.3.0)2010-10-14
Application notepdfUnderstanding Power MOSFET Datasheet Parameters (v.1.0)2012-04-17
BrochurepdfLeading-edge Automotive Power MOSFETs (v.1.0)2010-09-15
BrochurepdfPower MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)2011-05-20
Selection guidepdfNXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)2012-01-19
SPICE modellibBUK6E3R4-40C SPICE model (v.2.0)2012-04-12
Thermal designpdfBUK6E3R4-40C RC Thermal Model (v.1.7)2010-09-24
Thermal modelpdmlBUK6E3R4-40C Thermal model (v.1.0)2010-09-24

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BUK6E3R4-40C9340 642 24127BUK6E3R4-40C,127NADIGI-KEY CORPORATION5,0005/24/2012Buy online 
   NAMOUSER ELECTRONICS2505/24/2012Buy online 
   NAMOUSER ELECTRONICS2505/24/2012Buy online 
   ASIAELEMENT14 APAC1005/24/2012Buy online 
   NANEWARK/ELEMENT14805/24/2012Buy online 
   EUFARNELL805/24/2012Buy online 

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