N-channel TrenchMOS standard level FET
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
|VDS||drain-source voltage||Tj ≤ 175 °C; Tj ≥ 25 °C||100||V|
|ID||drain current||VGS = 10 V; Tmb = 25 °C||63||A|
|Ptot||total power dissipation||Tmb = 25 °C||200||W|
|RDSon||drain-source on-state resistance||VGS = 10 V; ID = 25 A; Tj = 175 °C||50||mΩ|
|RDSon||drain-source on-state resistance||VGS = 10 V; ID = 25 A; Tj = 25 °C||17||20||mΩ|
|EDS(AL)S||non-repetitive drain-source avalanche energy||ID = 60 A; Vsup ≤ 100 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped||400||mJ|
|Pin||Symbol||Description||Simplified outline||Graphic symbol|
|mb||D||mounting base; connected to drain|
Sample orders normally take 2-4 days for delivery.
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