BUK7608-55

N-channel TrenchMOS standard level FET


Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • Electrostatically robust due to integrated protection diodes
  • Low conduction losses due to low on-state resistance

Applications

  • Automotive and general purpose power switching
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageTj ≥ 25 °C; Tj ≤ 175 °C55V
IDdrain currentTmb = 25 °C75A
Ptottotal power dissipationTmb = 25 °C187W
Static characteristics
RDSondrain-source on-state resistanceVGS = 10 V; ID = 25 A; Tj = 25 °C6.58mΩ
Avalanche ruggedness
EDS(AL)Snon-repetitive drain-source avalanche energyID = 75 A; Vsup ≤ 25 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped500mJ

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Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1GgateSOT404 (D2PAK)
2Ddrain
3Ssource
mbDmounting base; connected to drain

Documentation for this product

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