BUK7624-55A

N-channel TrenchMOS standard level FET


Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • Low conduction losses due to low on-state resistance
  • Q101 compliant
  • Suitable for standard level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating

Applications

  • 12 V and 24 V loads
  • Automotive and general purpose power switching
  • Motors, lamps and solenoids
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltageTj ≥ 25 °C; Tj ≤ 175 °C55V
IDdrain currentTmb = 25 °C; VGS = 10 V47A
Ptottotal power dissipationTmb = 25 °C106W
Static characteristics
RDSondrain-source on-state resistanceVGS = 10 V; ID = 25 A; Tj = 175 °C48mΩ
RDSondrain-source on-state resistanceVGS = 10 V; ID = 25 A; Tj = 25 °C2024mΩ
Avalanche ruggedness
EDS(AL)Snon-repetitive drain-source avalanche energyID = 39 A; Vsup ≤ 55 V; RGS = 50 Ω; VGS = 10 V; Tj(init) = 25 °C; unclamped76mJ

Similar products

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1GgateSOT404 (D2PAK)
2Ddrain
3Ssource
mbDmounting base; connected to drain

Documentation for this product

TypeFormatTitleDate
Data sheetpdfTrenchMOS (tm) standard level FET (v.2.0)2001-03-01
Application notepdfUnderstanding Power MOSFET Datasheet Parameters (v.1.0)2012-04-17
BrochurepdfPower MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)2011-05-20
Selection guidepdfNXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)2012-01-19

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