BUK7L06-34ARC

N-channel TrenchPLUS standard level FET


Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include internal gate resistors and TrenchPLUS diodes for clamping and ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Features and benefits

  • AEC-Q101 compliant
  • Low conduction losses due to low on-state resistance
  • Reduced component count due to integrated gate resistor

Applications

  • 12 V loads
  • Automotive systems
  • General purpose power switching
  • Motors, lamps and solenoids
All information on this product information page is subject to the subsequent disclaimers:
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Show functional diagram

Block diagram: BUK7L06-34ARC, BUK7L11-34ARC
Block diagram: BUK7L06-34ARC, BUK7L11-34ARC

Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
VDSdrain-source voltage175 °C ≤ Tj ≤ 25 °C [0]34V
IDdrain currentVGS = 10 V; Tmb = 25 °C [1]75A
Ptottotal power dissipationTmb = 25 °C250W
Static characteristics
RDSondrain-source on-state resistanceVGS = 10 V; ID = 30 A; Tj = 25 °C5.16mΩ
Dynamic characteristics
QGDgate-drain chargeVGS = 10 V; ID = 25 A; VDS = 27 V; Tj = 25 °C31nC

Similar products

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1GgateSOT78C (TO-220)
2Ddrain
3Ssource
mbDmounting base; connected to drain

Documentation for this product

TypeFormatTitleDate
Data sheetpdfN-channel TrenchPLUS standard level FET (v.5.0)2009-02-18
Application notepdfUnderstanding Power MOSFET Datasheet Parameters (v.1.0)2012-04-17
BrochurepdfPower MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0)2011-05-20
Selection guidepdfNXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1)2012-01-19

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