
BUK9MGP-55PTS
Dual TrenchPLUS logic level FET
Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.
| Type number | Orderable part number | Ordering code (12NC) | Product status | Package | Packing | Marking | ECCN |
|---|---|---|---|---|---|---|---|
| BUK9MGP-55PTS | BUK9MGP-55PTS,518 | 9340 619 48518 | Volume production | SOT163-1 (SO20) | Reel Dry Pack, SMD, 13" | Standard Marking |
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | G1 | gate 1 | ![]() | ![]() |
| 2 | IS1 | current sense 1 | ||
| 3 | D1 | drain 1 | ||
| 4 | A1 | anode 1 | ||
| 5 | C1 | cathode 1 | ||
| 6 | G2 | gate 2 | ||
| 7 | IS2 | current sense 2 | ||
| 8 | D2 | drain 2 | ||
| 9 | A2 | anode 2 | ||
| 10 | C2 | cathode 2 | ||
| 11 | D2 | drain 2 | ||
| 12 | KS2 | Kelvin source 2 | ||
| 13 | S2 | source 2 | ||
| 14 | S2 | source 2 | ||
| 15 | D2 | drain 2 | ||
| 16 | D1 | drain 1 | ||
| 17 | KS1 | Kelvin source 1 | ||
| 18 | S1 | source 1 | ||
| 19 | S1 | source 1 | ||
| 20 | D1 | drain 1 |
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| Static characteristics, FET2 | ||||||
| RDSon | drain-source on-state resistance | VGS = 5 V; ID = 5 A; Tj = 25 °C | 21.3 | 25 | mΩ | |
| ID/Isense | ratio of drain current to sense current | Tj = 25 °C; VGS = 5 V | 5910 | 6570 | 7227 | A/A |
| V(BR)DSS | drain-source breakdown voltage | VGS = 0 V; ID = 250 µA; Tj = 25 °C | 55 | V | ||
| Static characteristics, FET1 | ||||||
| RDSon | drain-source on-state resistance | VGS = 5 V; ID = 10 A; Tj = 25 °C | 8.6 | 10 | mΩ | |
| ID/Isense | ratio of drain current to sense current | Tj = 25 °C; VGS = 5 V | 8100 | 9000 | 9900 | A/A |
| V(BR)DSS | drain-source breakdown voltage | VGS = 0 V; ID = 250 µA; Tj = 25 °C | 55 | V | ||
| V(BR)DSS | drain-source breakdown voltage | Tj = -55 °C; VGS = 0 V; ID = 250 µA | 50 | V | ||
| Type number | Orderable part number | Chemical content | RoHS | Leadfree conversion date | RHF | IFR (FIT) | MTBF (hours) | MSL | MSL LF |
|---|---|---|---|---|---|---|---|---|---|
| BUK9MGP-55PTS | BUK9MGP-55PTS,518 | BUK9MGP-55PTS | Always Pb-free | 3 | 3 |
| Type | Format | Title | Date |
|---|---|---|---|
| Data sheet | Dual TrenchPLUS logic level FET (v.1.0) | 2009-05-15 | |
| Application note | Current Sensing Power MOSFETs (v.2.0) | 2009-06-24 | |
| Application note | AN10137 Temperature sensing using TrenchPLUS devices (v.1.0) | 2010-06-18 | |
| Brochure | Power MOSFETs for Automotive Applications; Performance, Quality, Reliability (v.1.0) | 2011-05-20 | |
| Selection guide | NXP's Power MOSFET Selection Guide 2012; Smaller, faster, cooler (v.2.1) | 2012-01-19 |
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