N-channel 80 V, 107 mΩ logic level MOSFET in LFPAK56
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
|VDS||drain-source voltage||Tj ≤ 175 °C; Tj ≥ 25 °C||80||V|
|ID||drain current||VGS = 5 V; Tmb = 25 °C||11.8||A|
|Ptot||total power dissipation||Tmb = 25 °C||37||W|
|RDSon||drain-source on-state resistance||VGS = 5 V; ID = 5 A; Tj = 25 °C||89.7||107||mΩ|
|QGD||gate-drain charge||VGS = 5 V; ID = 5 A; VDS = 64 V; Tj = 25 °C||2.5||nC|
|Pin||Symbol||Description||Simplified outline||Graphic symbol|
|mb||D||mounting base; connected to drain|
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