BLS6G3135-120

LDMOS S-Band radar power transistor


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120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (3.1 GHz to 3.5 GHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Radar applications in the 3.1 GHz to 3.5 GHz frequency range
  • S-Band power amplifiers
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: Pulsed RF
Gppower gainVDS = 32 V; PL = 120 W9.511dB
ηDdrain efficiencyVDS = 32 V; 3100 MHz ≤ f ≤ 3500 MHz; IDq = 100 mA; PL = 120 W3943%
PL(1dB)output power at 1 dB gain compressionVDS = 32 V; IDq = 100 mA; 3100 MHz ≤ f ≤ 3500 MHz130W
PLoutput power120W
RLininput return lossVDS = 32 V; IDq = 100 mA; PL = 120 W-10-6dB
tffall timeVDS = 32 V; PL = 120 W650ns
trrise timeVDS = 32 V; PL = 120 W2050ns
VDSdrain-source voltagePL = 120 W32V
frangefrequency range31003500MHz
PL(1dB)nominal output power at 1 dB gain compression120W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLS6G3135-120BLS6G3135-120,1129340 600 63112Volume productionSOT502A
(SOT502A) 		Blister packStandard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT502A (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLS6G3135-120BLS6G3135-120,112BLS6G3135-120Always Pb-freeNANA
Quality and reliability disclaimer

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfLDMOS S-Band radar power transistor (v.2.0)2008-05-29
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
BrochurepdfHigh performance aerospace and defense solutions (v.1.2)2010-12-15
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typeziplayout_bls6g3135-120 (v.1.0)2009-01-15
Other typezipPCB Design BLS6G3135(S)-120 3100-3500 MHz Pulsed-RF (Data sheet) (v.1.0)2011-11-01
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLS6G3135-120 ADS Model (v.1.0)2010-03-19
Simulation modelzipRF Power Model Library for MicroWave Office (v.2.1)2012-05-22
Simulation modelpdfRF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)2012-05-22

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLS6G3135-1209340 600 63112BLS6G3135-120,112NANEWARK/ELEMENT1435/24/2012Buy online 
   EUFARNELL35/24/2012Buy online 
   ASIAELEMENT14 APAC35/24/2012Buy online 
   JAPANCHIP ONE STOPno05/14/2012Buy online 

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