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NXP offers complete line-ups of RF power transistors operating from 400 MHz right up to 3.8 GHz.

NXP offers complete RF power transistor line-ups, operating from 400 MHz right up to 3.8 GHz for base stations, covering all cellular technologies (GSM/EDGE, CDMA, TD-SCDMA, W-CDMA/UMTS, LTE and WiMAX).

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Featured product

BLF8G27LS-100V - More video bandwidth with Doherty efficiency

Datasheet (pdf)

A 100 W final stage broadband (2.5-2.7 GHz) amplifier that delivers improved video bandwidth for today's multi-mode, multi-carrier base station applications. It is designed using NXP's 8th generation LDMOS process, which ensures high efficiency and proven ruggedness. The improved efficiency enables broadband operation even when used in Doherty architectures to meet the growing data demands of users.



Key features and benefits

  • Highest efficiency
  • Best ruggedness
  • Highest power, single ended devices
  • Advanced 2-way and 3-way Doherty amplifier designs
  • High yields in volume production

Key applications

  • Cellular base stations – MC-GSM, GSM-EDGE, (TD-S)CDMA, W-CDMA / UMTS), LTE
  • WiMAX base stations

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