BLF6G15LS-250PBRN

Power LDMOS transistor


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250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Enhanced ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1450 MHz to 1550 MHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
  • Intergrated current sense

Applications

  • RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA
  • Multi carrier applications in the 1450 MHz to 1550 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range14501550MHz
PL(1dB)nominal output power at 1 dB gain compression250W
Test signal: 2-c WCDMA
PL(AV)average output power60W
Gppower gainVDS = 28 V; PL(AV) = 60 W16.518.5dB
RLininput return lossVDS = 28 V; IDq = 1410 mA; PL(AV) = 60 W-11-7dB
ηDdrain efficiencyVDS = 28 V; 1476 MHz < f < 1511 MHz; IDq = 1410 mA; PL(AV) = 60 W3134%
ACPRadjacent channel power ratioPL(AV) = 60 W; VDS = 28 V; IDq = 1410 mA; 1476 MHz < f < 1511 MHz-30-27dBc

Similar products

Package

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF6G15LS-250PBRNBLF6G15LS-250PBRN,9340 643 02112Volume productionSOT1110B
(CDFM8) 		Bulk PackStandard Marking
BLF6G15LS-250PBRNBLF6G15LS-250PBRN:9340 643 02118Volume productionSOT1110B
(CDFM8) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1D1drain1sot1110b simplified viewPower LDMOS transistor
2D2drain2
3G1gate1
4G2gate2
5Ssource
6SDsense drain
7SDsense drain
8SGsense gate
9SGsense gate

Outline drawing

Package VersionPackage NamePackage DescriptionReference CodesIssue Date
SOT1110BCDFM8Earless flanged LDMOST ceramic package; 8 leads2010-02-02

Related documents

Application note

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF6G15LS-250PBRNBLF6G15LS-250PBRN,BLF6G15LS-250PBRNAlways Pb-freeNANA
BLF6G15LS-250PBRNBLF6G15LS-250PBRN:BLF6G15LS-250PBRNAlways Pb-freeNANA
Quality and reliability disclaimer

Quality and reliability disclaimer

Important Legal Notice on the product/generic quality information, No Warranty

NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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Documentation for this product

File nameTitleTypeFormatDate
BLF6G15LS-250PBRNPower LDMOS transistorData sheetpdf2012-07-18
AN10896Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
AN109231.5GHz Doherty power amplifier for base station applications using the BLF6G15L-250PBRNApplication notepdf2011-03-14
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
PCB_Design_BLF6G15L-250PBRN_AN10923PCB Design BLF6G15L-250PBRN (AN10923)Other typezip2011-03-24
75017272NXP's RF Manual 16th editionSelection guidepdf2012-06-08
BLF6G15L-250PBRN_ADS-2009_ModelBLF6G15L-250PBRN ADS-2009 ModelSimulation modelzip2011-10-27

Ordering & availability

Type numberOrdering code (12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF6G15LS-250PBRN9340 643 02112BLF6G15LS-250PBRN,       
BLF6G15LS-250PBRN9340 643 02118BLF6G15LS-250PBRN:      not available

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