BLD6G22LS-50

Download datasheet This product has been discontinued.
Click here for discontinuation information.
This product has been discontinued. Click here for discontinuation information.

W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor

The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequencies from 2110 MHz to 2170 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

Features and benefits

  • Fully optimized integrated Doherty concept
  • Integrated assymetrical power splitter at input
  • Integrated power combiner
  • Peak biasing down to 0 V
  • Low junction temperature
  • High efficiency
  • 100 % peak power tested for guaranteed output power capability
  • Integrated ESD protection
  • Good pair match (main and peak on the same chip)
  • Independent control of main and peak bias
  • Internally matched for ease of use
  • Excellent ruggedness
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • High efficiency RF power amplifiers for TD-SCDMA multicarrier applications.

Downloads

Datasheet
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLD6G22LS-50

W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2110 2170 MHz
PL(3dB) nominal output power at 3 dB gain compression 50 W
Test signal: TD-SCDMA
Gp power gain PL(AV) = 8 W; VDS = 28 V [0] 12.5 14 dB
RLin input return loss PL(AV) = 8 W; VDS = 28 V; IDq = 170 mA [0] -17 -10 dB
ηD drain efficiency VDS = 28 V; f = 2140 MHz; IDq = 170 mA [0] 37 40 %
PL(AV) average output power VDS = 28 V [0] 8 W
ACPR adjacent channel power ratio PL(AV) = 8 W; VDS = 28 V; f = 2140 MHz; IDq = 170 mA [0] -30 -24 dBc
PARO output peak-to-average ratio PL(AV) = 8 W [0] 7.6 dB

Package / Packing

All type numbers in the table below are discontinued.

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLD6G22LS-50 CDFM4
(SOT1130B)
sot1130b_po Bulk Pack Withdrawn Standard Marking BLD6G22LS-50,112
(9340 635 12112)

Discontinuation information

Type number Ordering code (12NC) Last-time buy date Last-time delivery date Replacement product DN Notice Status Comments
BLD6G22LS-50 9340 635 12112 2015-09-30 2015-12-31 Ampleon-DN_201412012DN Full withdrawal

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G+BM gate + bias main
3 S source
4 n.c. not connected
5 BP bias peak

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLD6G22LS-50 9340 635 12112 BLD6G22LS-50,112 RFMW Buy Not available
DigiKey Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLD6G22LS-50 9340 635 12112 BLD6G22LS-50,112 RFMW Buy Not available
DigiKey Buy