This device has been transferred from Ampleon to Rochester Electronics.

UHF power LDMOS transistor

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

Features and benefits

  • High power gain
  • Easy power control
  • Excellent ruggedness
  • Source on mounting base eliminates DC isolators, reducing common mode inductance
  • Designed for broadband operation (HF to 2.2 GHz)

Applications

  • Communication transmitter applications in the UHF frequency range
  • Broadband applications (HF to 2.2 GHz)

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 2200 MHz
PL(1dB) nominal output power at 1 dB gain compression 10 W
Test signal: CW
Gp power gain PL = 10 W; VDS = 26 V 11 dB
ηD drain efficiency PL = 10 W; VDS = 26 V; f = 2200 MHz; IDq = 85 mA 30 %
PL(PEP) peak envelope power 10 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF2043F SOT467C
(SOT467C)
sot467c_po Reel 11¼" Q1/T1 in LargePack Transferred Standard Marking BLF2043F,135
(9340 563 75135)
Bulk Pack Transferred Standard Marking BLF2043F,112
(9340 563 75112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF2043F 9340 563 75135 BLF2043F,135 Rochester Electronics Buy Not available
BLF2043F 9340 563 75112 BLF2043F,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF2043F 9340 563 75135 BLF2043F,135 Rochester Electronics Buy Not available
BLF2043F 9340 563 75112 BLF2043F,112 Rochester Electronics Buy Not available

No documentation available.