BLF3G21-30

UHF power LDMOS transistor


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30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.

Features and benefits

  • Excellent back-off linearity
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
  • Designed for broadband operation (HF to 2200 MHz)
  • No internal matching for broadband operation
  • ESD protection

Applications

  • RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations
  • Multicarrier applications in the HF to 2200 MHz frequency range
  • Broadcast drivers
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range18002200MHz
PL(1dB)nominal output power at 1 dB gain compression30W
Test signal: CW
Gppower gainVDS = 26 V; PL(PEP) = 30 W12.513.5dB
ηDdrain efficiencyVDS = 26 V; f = 2000 MHz; IDq = 450 mA; PL(PEP) = 30 W3235%
IMD3third-order intermodulation distortionVDS = 26 V; IDq = 450 mA; PL(PEP) ≤ 10 W-50dBc
IMD3third-order intermodulation distortionVDS = 26 V; IDq = 450 mA; PL(PEP) = 30 W-26-23dBc
PL(PEP)peak envelope power30W
RLininput return lossVDS = 26 V; IDq = 450 mA; PL(PEP) = 30 W-16-11dB

Similar products

Package

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF3G21-30BLF3G21-30,1129340 579 09112Volume productionSOT467CBlister packStandard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT467C (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Outline drawing

Package VersionPackage NamePackage DescriptionReference CodesIssue Date
SOT467CSOT467Cflanged ceramic package; 2 mounting holes; 2 leads1999-12-28

Related documents

Application note

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF3G21-30BLF3G21-30,112BLF3G21-30Always Pb-freeNANA
Quality and reliability disclaimer

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Documentation for this product

File nameTitleTypeFormatDate
BLF3G21-30UHF power LDMOS transistorData sheetpdf2007-02-14
AN10896Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
75017272NXP's RF Manual 16th editionSelection guidepdf2012-06-08
blf3g21_30_26V_450mAblf3g21_30_26V_450mA SPICE modelSPICE models2p2012-06-08

Ordering & availability

Type numberOrdering code (12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF3G21-309340 579 09112BLF3G21-30,112NAAVNET EXPRESS AMERICAS1105/19/2013Buy online 
   NAARROW ELECTRONICS505/17/2013Buy online 
   EURFMW Ltd2405/18/2013Buy online 
   NARFMW Ltd2405/18/2013Buy online 

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