BLF8G22LS-200GV

Power LDMOS transistor


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200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

Features and benefits

  • Excellent ruggedness
  • High efficiency
  • Low Rth providing excellent thermal stability
  • Designed for broadband operation
  • Lower output capacitance for improved performance in Doherty applications
  • Designed for low memory effects providing excellent pre-distortability
  • Internally matched for ease of use
  • Integrated ESD protection
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
  • Design optimized for gull-wing

Applications

  • RF power amplifiers for base stations
  • Multicarrier applications in the 2110 MHz to 2170 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
frangefrequency range21102170MHz
PL(1dB)nominal output power at 1 dB gain compression200W
Test signal: 2-c WCDMA
Gppower gainVDS = 28 V; PL(AV) = 55 W17.819dB
RLininput return lossVDS = 28 V; IDq = 2000 mA; PL(AV) = 55 W-13-7dB
ηDdrain efficiencyVDS = 28 V; 2110 MHz ≤ f ≤ 2170 MHz; IDq = 2000 mA; PL(AV) = 55 W2629%
ACPR5Madjacent channel power ratio (5 MHz)PL(AV) = 55 W; VDS = 28 V; IDq = 2000 mA; 2110 MHz ≤ f ≤ 2170 MHz-30-26dBc

Similar products

Package

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF8G22LS-200GVBLF8G22LS-200GV,129340 669 11127Volume productionSOT1244C
(CDFM6) 		Horizontal, Rail PackStandard Marking
BLF8G22LS-200GVBLF8G22LS-200GVJ9340 669 11118Volume productionSOT1244C
(CDFM6) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT1244CGraphic symbol BLF8G22LS-200
2Ggate
3Ssource
4v.lvideo lead
5v.lvideo lead
6n.cnot connected
7n.cnot connected

Outline drawing

Package VersionPackage NamePackage DescriptionReference CodesIssue Date
SOT1244CCDFM6Earless flanged ceramic package; 6 leads2012-05-14

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF8G22LS-200GVBLF8G22LS-200GV,12BLF8G22LS-200GVAlways Pb-free11
BLF8G22LS-200GVBLF8G22LS-200GVJBLF8G22LS-200GVAlways Pb-free11
Quality and reliability disclaimer

Quality and reliability disclaimer

Important Legal Notice on the product/generic quality information, No Warranty

NXP Semiconductors is providing this data for your convenience only. Please note however that NO WARRANTY, REPRESENTATION, GUARANTEE OR LEGALLY BINDING PRODUCT DESCRIPTION is provided by publishing this informational data, nor does NXP Semiconductors acknowledge or accept any liability related thereto. The documentation and data on NXP Semiconductors products can be found in the data sheets as officially published by NXP Semiconductors. For all purchase of products from NXP Semiconductors the NXP Semiconductors' General Terms and Conditions of Commercial Sale will apply.

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NXP Semiconductors' products are specifically designed and manufactured to be used within the electrical, thermal, mechanical and other parameters set forth in NXP Semiconductors' data sheets. Quality and reliability data provided by NXP Semiconductors, such as MTBF, MSL and FIT, is intended to be a non-binding estimate of product performance based upon diffusion process, history only. It does not imply that any performance levels reflected in such data can be met if the product is operated outside the conditions expressly stated in the latest published data sheet for a device or in your application.

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Documentation for this product

File nameTitleTypeFormatDate
BLF8G22LS-200V_8G22LS-200GVPower LDMOS transistorData sheetpdf2012-12-10
AN10896Mounting and Soldering of RF transistorsApplication notepdf2012-12-19
75017347Enabling the Mobile ExperienceBrochurepdf2013-02-05
75017301Gen8: the next generation of LDMOS RF power for wireless infrastructuresLeafletpdf2012-06-11
75017398Extended video bandwidth with Doherty efficiencyLeafletpdf2013-03-21
fatigue_in_aluminum_bond_wiresFatigue in aluminum bond wiresMounting and solderingpdf2009-10-08
PCB_Design_BLF8G22LS-200V_8G22LS-200GV_Data-sheetPCB Design BLF8G22LS-200(G)V (Data sheet)Other typezip2012-02-23
Factsheet_Gen8_LDMOS_RF_pt_with_VBWFactsheet Gen8 LDMOS RF power transistor with Video BandwidthOther typepdf2012-10-23
75017272NXP's RF Manual 16th editionSelection guidepdf2012-06-08

Ordering & availability

Type numberOrdering code (12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF8G22LS-200GV9340 669 11127BLF8G22LS-200GV,12       
BLF8G22LS-200GV9340 669 11118BLF8G22LS-200GVJ      not available

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