BLF7G22LS-130

Power LDMOS transistor


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130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Features and benefits

  • Excellent ruggedness
  • Low memory effects providing excellent digital pre-distortion capability
  • High efficiency
  • Internally matched for ease of use
  • Integrated ESD protection
  • Designed for broadband operation (2000 MHz to 2200 MHz)
  • Low Rth providing excellent thermal stability
  • Lower output capacitance for improved performance in Doherty applications
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for W-CDMA base stations
  • Multicarrier applications in the 2000 MHz to 2200 MHz frequency range
All information on this product information page is subject to the subsequent disclaimers:
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Parametrics of this product

SymbolParameterConditionsMinTyp/NomMaxUnit
Test signal: 2-c WCDMA
PL(AV)average output power30W
Gppower gainVDS = 28 V; PL(AV) = 30 W1718.5dB
ηDdrain efficiencyVDS = 28 V; IDq = 950 mA; PL(AV) = 30 W2932%
ACPRadjacent channel power ratioPL(AV) = 30 W; VDS = 28 V; IDq = 950 mA; 2110 MHz ≤ f ≤ 2170 MHz-31-28dBc
RLininput return lossVDS = 28 V; IDq = 950 mA; PL(AV) = 30 W-15-9dB
frangefrequency range20002200MHz
PL(1dB)nominal output power at 1 dB gain compression130W

Similar products

Products / Packages

Type numberOrderable part numberOrdering code (12NC)Product statusPackagePackingMarking
BLF7G22LS-130BLF7G22LS-130,1129340 635 01112Volume productionSOT502B
(SOT502B) 		Blister packStandard Marking
BLF7G22LS-130BLF7G22LS-130,1189340 635 01118Volume productionSOT502B
(SOT502B) 		Reel Pack, SMD, 13"Standard Marking

Pinning information

PinSymbolDescriptionSimplified outlineGraphic symbol
1DdrainSOT502B (LDMOST)N-channel Enhancement type MOSFET
2Ggate
3Ssource

Quality, reliability & chemical content

Type numberOrderable part numberChemical contentRoHSLeadfree conversion dateRHFIFR (FIT)MTBF (hours)MSLMSL LF
BLF7G22LS-130BLF7G22LS-130,112BLF7G22LS-130Always Pb-freeNANA
BLF7G22LS-130BLF7G22LS-130,118BLF7G22LS-130Always Pb-freeNANA
Quality and reliability disclaimer

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Documentation for this product

TypeFormatTitleDate
Data sheetpdfPower LDMOS transistor (v.4.0)2011-01-20
Application notepdfDoherty RF performance analysis using the BLF7G22LS-130 (v.2.0)2010-02-25
Application notepdfMounting and Soldering of RF transistors (v.1.0)2010-06-02
BrochurepdfYour partner in Mobile Communication Infrastructure design; High Performance RF for wireless infrastructure (v.1.0)2011-05-23
Mounting and solderingpdfFatigue in aluminum bond wires (v.1.0)2009-10-08
Other typezipPCB Design BLF7G22L(S)-130 (AN10885) (v.2.2)2011-02-22
Selection guidepdfNXP's RF Manual 15th edition (v.1.0)2011-05-19
Simulation modelzipBLF7G22-130 ADS Model (v.2.2)2010-06-17
Simulation modelzipRF Power Model Library for MicroWave Office (v.2.1)2012-05-22
Simulation modelpdfRF Power Model Library Manual and Installation Instructions for MicroWave Office (v.3.2)2012-05-22

Ordering & availability

Type numberOrdering code(12NC)Orderable part numberRegionDistributorIn stockOrder quantityInventory dateBuy onlineSamples
BLF7G22LS-1309340 635 01112BLF7G22LS-130,112NADIGI-KEY CORPORATION205/24/2012Buy online 
   JAPANCHIP ONE STOPno05/14/2012Buy online 
BLF7G22LS-1309340 635 01118BLF7G22LS-130,118JAPANCHIP ONE STOPno05/14/2012Buy onlinenot available

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