NXP's leading LDMOS technologies together with advanced package concepts enable best-in-class performing power amplifiers. We offer the industry's highest power and best ruggedness for all ISM applications – in this particular case for the 2.40 – 2.50 GHz band.
MOSFETs
2400-2500 MHz LDMOS RF Power Transistors
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- Description
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New and updated products
Key features and benefits
- Highest power
- Best ruggedness
- Best-in-class design support – all the way from idea to realization and production
- Very-low thermal resistance design for unrivalled reliability and performance
- Very-low thermal resistance design for unrivalled reliability
Key applications
- Microwave furnaces
- Medical
- Particle accelerators
- ISM
Design tools & Assets
A central place for your design support and tooling.
For today´s short product development cycles, NXP
helps you with this portal to simplify your design.
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Descriptive summary
Design support and tools
To support RF- and system engineers to design-in and integrate our solutions in the shortest time possible, we can offer various design and simulation information such as layout files, BIC large signal models, loadpull and S-parameters data.
Products
| Type number | Description | Status | Quick access |
|---|---|---|---|
| BLF2425M6L180P | Power LDMOS transistor | Download datasheet Order sample | |
| BLF2425M6LS180P | Power LDMOS transistor | Download datasheet Order sample | |
| BLF2425M7L140 | Power LDMOS transistor | Download datasheet Order sample | |
| BLF2425M7L250P | Power LDMOS transistor | Download datasheet Order sample | |
| BLF2425M7LS140 | Power LDMOS transistor | Download datasheet Order sample | |
| BLF2425M7LS250P | Power LDMOS transistor | Download datasheet Order sample | |
| BLF25M612 | Power LDMOS transistor | Order sample | |
| BLF25M612G | Power LDMOS transistor | Order sample |







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